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| Type | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 38A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 16.9mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 8.2 nC @ 4.5 V |
| vgs (最大值): | ±15V |
| 输入电容 (ciss) (max) @ vds: | 680 pF @ 12 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 41.6W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | LFPAK56, Power-SO8 |
| 包/箱: | SC-100, SOT-669 |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
 |
STU12N65M5STMicroelectronics |
MOSFET N-CH 650V 8.5A IPAK |
有存货: 0 $0.00000 |
 |
SI2335DS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 3.2A SOT23-3 |
有存货: 0 $0.00000 |
 |
SI4866BDY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 12V 21.5A 8SO |
有存货: 0 $0.00000 |
 |
IPB12CN10N GIR (Infineon Technologies) |
MOSFET N-CH 100V 67A D2PAK |
有存货: 0 $0.00000 |
 |
HUF76629D3ST-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 20A TO252 |
有存货: 0 $0.00000 |
 |
STB30NM50NSTMicroelectronics |
MOSFET N-CH 500V 27A D2PAK |
有存货: 0 $0.00000 |
 |
FQI12N50TUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 12.1A I2PAK |
有存货: 0 $0.00000 |
 |
IPS118N10N GIR (Infineon Technologies) |
MOSFET N-CH 100V 75A TO251-3 |
有存货: 0 $0.00000 |
 |
IRF7471PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 10A 8SO |
有存货: 0 $0.00000 |
 |
FDV302P_D87ZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 25V 120MA SOT23 |
有存货: 0 $0.00000 |
