图片仅供参考，请联系我们获取真实图片
| Type | 描述 |
|---|---|
| 系列: | MDmesh™ V |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 8.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 430mOhm @ 4.3A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 22 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 900 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 70W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I-PAK |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
 |
SI2335DS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 3.2A SOT23-3 |
有存货: 0 $0.00000 |
 |
SI4866BDY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 12V 21.5A 8SO |
有存货: 0 $0.00000 |
 |
IPB12CN10N GIR (Infineon Technologies) |
MOSFET N-CH 100V 67A D2PAK |
有存货: 0 $0.00000 |
 |
HUF76629D3ST-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 20A TO252 |
有存货: 0 $0.00000 |
 |
STB30NM50NSTMicroelectronics |
MOSFET N-CH 500V 27A D2PAK |
有存货: 0 $0.00000 |
 |
FQI12N50TUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 12.1A I2PAK |
有存货: 0 $0.00000 |
 |
IPS118N10N GIR (Infineon Technologies) |
MOSFET N-CH 100V 75A TO251-3 |
有存货: 0 $0.00000 |
 |
IRF7471PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 10A 8SO |
有存货: 0 $0.00000 |
 |
FDV302P_D87ZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 25V 120MA SOT23 |
有存货: 0 $0.00000 |
 |
FDD8445-F085PSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 50A TO252 |
有存货: 0 $0.00000 |
