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SI4866BDY-T1-GE3

SI4866BDY-T1-GE3

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制造商部分
SI4866BDY-T1-GE3
制造商
Vishay / Siliconix
描述
MOSFET N-CH 12V 21.5A 8SO
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
7361
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchFET®
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Obsolete
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):12 V
电流 - 连续漏极 (id) @ 25°c:21.5A (Tc)
驱动电压(最大 rds on,最小 rds on):1.8V, 4.5V
rds on (max) @ id, vgs:5.3mOhm @ 12A, 4.5V
vgs(th) (最大值) @ id:1V @ 250µA
栅极电荷 (qg) (max) @ vgs:80 nC @ 4.5 V
vgs (最大值):±8V
输入电容 (ciss) (max) @ vds:5020 pF @ 6 V
场效应管特征:-
功耗(最大值):2.5W (Ta), 4.45W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:8-SO
包/箱:8-SOIC (0.154", 3.90mm Width)

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