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SSM6N35FE,LM

SSM6N35FE,LM

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制造商部分
SSM6N35FE,LM
制造商
Toshiba Electronic Devices and Storage Corporation
描述
MOSFET 2N-CH 20V 0.18A ES6
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
1609
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:2 N-Channel (Dual)
场效应管特征:Logic Level Gate
漏源电压 (vdss):20V
电流 - 连续漏极 (id) @ 25°c:180mA
rds on (max) @ id, vgs:3Ohm @ 50mA, 4V
vgs(th) (最大值) @ id:1V @ 1mA
栅极电荷 (qg) (max) @ vgs:-
输入电容 (ciss) (max) @ vds:9.5pF @ 3V
功率 - 最大值:150mW
工作温度:150°C (TJ)
安装类型:Surface Mount
包/箱:SOT-563, SOT-666
供应商设备包:ES6 (1.6x1.6)

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