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SSM6N815R,LF

SSM6N815R,LF

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制造商部分
SSM6N815R,LF
制造商
Toshiba Electronic Devices and Storage Corporation
描述
MOSFET 2N-CH 100V 2A 6TSOPF
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
314
在线数据表
-
询问

Product Specifications

Type 描述
系列:U-MOSVIII-H
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:2 N-Channel (Dual)
场效应管特征:Logic Level Gate, 4V Drive
漏源电压 (vdss):100V
电流 - 连续漏极 (id) @ 25°c:2A (Ta)
rds on (max) @ id, vgs:103mOhm @ 2A, 10V
vgs(th) (最大值) @ id:2.5V @ 100µA
栅极电荷 (qg) (max) @ vgs:3.1nC @ 4.5V
输入电容 (ciss) (max) @ vds:290pF @ 15V
功率 - 最大值:1.8W (Ta)
工作温度:150°C
安装类型:Surface Mount
包/箱:6-SMD, Flat Leads
供应商设备包:6-TSOP-F

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