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QS8K11TCR

QS8K11TCR

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制造商部分
QS8K11TCR
制造商
ROHM Semiconductor
描述
4V DRIVE NCH+NCH MOSFET
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
4
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:2 N-Channel (Dual)
场效应管特征:-
漏源电压 (vdss):30V
电流 - 连续漏极 (id) @ 25°c:3.5A
rds on (max) @ id, vgs:50mOhm @ 3.5A, 10V
vgs(th) (最大值) @ id:2.5V @ 1mA
栅极电荷 (qg) (max) @ vgs:3.3nC @ 5V
输入电容 (ciss) (max) @ vds:180pF @ 10V
功率 - 最大值:1.5W
工作温度:150°C (TJ)
安装类型:Surface Mount
包/箱:8-SMD, Flat Lead
供应商设备包:TSMT8

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