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APTM120H140FT1G

APTM120H140FT1G

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制造商部分
APTM120H140FT1G
制造商
Roving Networks / Microchip Technology
描述
MOSFET 4N-CH 1200V 8A SP1
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
0616
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
场效应管类型:4 N-Channel (H-Bridge)
场效应管特征:Standard
漏源电压 (vdss):1200V (1.2kV)
电流 - 连续漏极 (id) @ 25°c:8A
rds on (max) @ id, vgs:1.68Ohm @ 7A, 10V
vgs(th) (最大值) @ id:5V @ 1mA
栅极电荷 (qg) (max) @ vgs:145nC @ 10V
输入电容 (ciss) (max) @ vds:3812pF @ 25V
功率 - 最大值:208W
工作温度:-40°C ~ 150°C (TJ)
安装类型:Chassis Mount
包/箱:SP1
供应商设备包:SP1

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