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SH8M31GZETB

SH8M31GZETB

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制造商部分
SH8M31GZETB
制造商
ROHM Semiconductor
描述
SH8M31 IS A POWER MOSFET WITH LO
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
2426
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N and P-Channel
场效应管特征:Standard
漏源电压 (vdss):60V
电流 - 连续漏极 (id) @ 25°c:4.5A (Ta)
rds on (max) @ id, vgs:65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V
vgs(th) (最大值) @ id:3V @ 1mA
栅极电荷 (qg) (max) @ vgs:7nC, 40nC @ 5V, 10V
输入电容 (ciss) (max) @ vds:500pF, 2500pF @ 10V
功率 - 最大值:2W (Ta)
工作温度:150°C (TJ)
安装类型:Surface Mount
包/箱:8-SOIC (0.154", 3.90mm Width)
供应商设备包:8-SOP

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