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CSD85312Q3E

CSD85312Q3E

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制造商部分
CSD85312Q3E
制造商
Texas Instruments
描述
MOSFET 2N-CH 20V 39A 8VSON
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
3607
在线数据表
-
询问

Product Specifications

Type 描述
系列:NexFET™
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:2 N-Channel (Dual) Common Source
场效应管特征:Logic Level Gate, 5V Drive
漏源电压 (vdss):20V
电流 - 连续漏极 (id) @ 25°c:39A
rds on (max) @ id, vgs:12.4mOhm @ 10A, 8V
vgs(th) (最大值) @ id:1.4V @ 250µA
栅极电荷 (qg) (max) @ vgs:15.2nC @ 4.5V
输入电容 (ciss) (max) @ vds:2390pF @ 10V
功率 - 最大值:2.5W
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:8-PowerVDFN
供应商设备包:8-VSON (3.3x3.3)

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