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BSZ0909NDXTMA1

BSZ0909NDXTMA1

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制造商部分
BSZ0909NDXTMA1
制造商
IR (Infineon Technologies)
描述
MOSFET 2N-CH 30V 20A WISON-8
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
320
在线数据表
-
询问

Product Specifications

Type 描述
系列:OptiMOS™
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:2 N-Channel (Dual)
场效应管特征:Logic Level Gate, 4.5V Drive
漏源电压 (vdss):30V
电流 - 连续漏极 (id) @ 25°c:20A (Tc)
rds on (max) @ id, vgs:18mOhm @ 9A, 10V
vgs(th) (最大值) @ id:2V @ 250µA
栅极电荷 (qg) (max) @ vgs:2.6nC @ 4.5V
输入电容 (ciss) (max) @ vds:360pF @ 15V
功率 - 最大值:17W
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:8-PowerVDFN
供应商设备包:PG-WISON-8

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