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QJD1210SA1

QJD1210SA1

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制造商部分
QJD1210SA1
制造商
Powerex, Inc.
描述
MOSFET 2N-CH 1200V 100A SIC
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
7653
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Obsolete
场效应管类型:2 N-Channel (Dual)
场效应管特征:Standard
漏源电压 (vdss):1200V (1.2kV)
电流 - 连续漏极 (id) @ 25°c:100A
rds on (max) @ id, vgs:17mOhm @ 100A, 15V
vgs(th) (最大值) @ id:1.6V @ 34mA
栅极电荷 (qg) (max) @ vgs:330nC @ 15V
输入电容 (ciss) (max) @ vds:8200pF @ 10V
功率 - 最大值:520W
工作温度:-40°C ~ 150°C (TJ)
安装类型:Chassis Mount
包/箱:Module
供应商设备包:Module

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