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SIF912EDZ-T1-E3

SIF912EDZ-T1-E3

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制造商部分
SIF912EDZ-T1-E3
制造商
Vishay / Siliconix
描述
MOSFET 2N-CH 30V 7.4A 6-POWERPAK
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
7660
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchFET®
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Obsolete
场效应管类型:2 N-Channel (Dual) Common Drain
场效应管特征:Logic Level Gate
漏源电压 (vdss):30V
电流 - 连续漏极 (id) @ 25°c:7.4A
rds on (max) @ id, vgs:19mOhm @ 7.4A, 4.5V
vgs(th) (最大值) @ id:1.5V @ 250µA
栅极电荷 (qg) (max) @ vgs:15nC @ 4.5V
输入电容 (ciss) (max) @ vds:-
功率 - 最大值:1.6W
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:PowerPAK® 2x5
供应商设备包:PowerPAK® (2x5)

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