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VQ1006P-2

VQ1006P-2

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制造商部分
VQ1006P-2
制造商
Vishay / Siliconix
描述
MOSFET 4N-CH 90V 0.4A 14DIP
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
7645
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tube
零件状态:Obsolete
场效应管类型:4 N-Channel
场效应管特征:Logic Level Gate
漏源电压 (vdss):90V
电流 - 连续漏极 (id) @ 25°c:400mA
rds on (max) @ id, vgs:4.5Ohm @ 1A, 10V
vgs(th) (最大值) @ id:2.5V @ 1mA
栅极电荷 (qg) (max) @ vgs:-
输入电容 (ciss) (max) @ vds:60pF @ 25V
功率 - 最大值:2W
工作温度:-55°C ~ 150°C (TJ)
安装类型:Through Hole
包/箱:-
供应商设备包:14-DIP

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