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IRF6802SDTR1PBF

IRF6802SDTR1PBF

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制造商部分
IRF6802SDTR1PBF
制造商
IR (Infineon Technologies)
描述
MOSFET 2N-CH 25V 16A SA
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
7605
在线数据表
-
询问

Product Specifications

Type 描述
系列:HEXFET®
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Obsolete
场效应管类型:2 N-Channel (Dual)
场效应管特征:Logic Level Gate
漏源电压 (vdss):25V
电流 - 连续漏极 (id) @ 25°c:16A
rds on (max) @ id, vgs:4.2mOhm @ 16A, 10V
vgs(th) (最大值) @ id:2.1V @ 35µA
栅极电荷 (qg) (max) @ vgs:13nC @ 4.5V
输入电容 (ciss) (max) @ vds:1350pF @ 13V
功率 - 最大值:1.7W
工作温度:-40°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:DirectFET™ Isometric SA
供应商设备包:DIRECTFET™ SA

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