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RJM0603JSC-00#12

RJM0603JSC-00#12

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制造商部分
RJM0603JSC-00#12
制造商
Renesas Electronics America
描述
MOSFET 3N/3P-CH 60V 20A HSOP
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
7610
在线数据表
-
询问

Product Specifications

Type 描述
系列:Automotive, AEC-Q101
包裹:Tray
零件状态:Active
场效应管类型:3 N and 3 P-Channel (3-Phase Bridge)
场效应管特征:Logic Level Gate, 4.5V Drive
漏源电压 (vdss):60V
电流 - 连续漏极 (id) @ 25°c:20A
rds on (max) @ id, vgs:20mOhm @ 10A, 10V
vgs(th) (最大值) @ id:2.5V @ 1mA
栅极电荷 (qg) (max) @ vgs:43nC @ 10V
输入电容 (ciss) (max) @ vds:2600pF @ 10V
功率 - 最大值:54W
工作温度:175°C
安装类型:Surface Mount
包/箱:20-SOIC (0.433", 11.00mm Width) Exposed Pad
供应商设备包:20-HSOP

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