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| Type | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| igbt型: | - |
| 电压 - 集电极发射极击穿（最大值）: | 600 V |
| 电流 - 集电极 (ic) (max): | 50 A |
| 电流 - 集电极脉冲 (icm): | 100 A |
| vce(on) (max) @ vge, ic: | 2.45V @ 15V, 50A |
| 功率 - 最大值: | 240 W |
| 开关能量: | 1.3mJ (on), 1.34mJ (off) |
| 输入类型: | Standard |
| 栅极电荷: | - |
| td（开/关）@ 25°c: | 90ns/300ns |
| 测试条件: | 300V, 50A, 13Ohm, 15V |
| 反向恢复时间 (trr): | - |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | TO-3PL |
| 供应商设备包: | TO-3P(LH) |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
|
SIGC42T60NCX1SA3IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
有存货: 0 $0.00000 |
|
IRGC100B60KBIR (Infineon Technologies) |
IGBT CHIP |
有存货: 0 $0.00000 |
|
IGC10T65U8QX1SA1IR (Infineon Technologies) |
IGBT CHIP |
有存货: 0 $0.00000 |
|
SIGC18T60SNCX1SA3IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
有存货: 0 $0.00000 |
|
PCISL9R860WSanyo Semiconductor/ON Semiconductor |
IGBT PCISL9R860W |
有存货: 0 $0.00000 |
|
IRG7PK42UD1MPBFIR (Infineon Technologies) |
IGBT 1200V DIE |
有存货: 0 $0.00000 |
|
SIGC10T60EX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V 20A WAFER |
有存货: 0 $0.00000 |
|
IRG7CH28UEDIR (Infineon Technologies) |
IGBT 1200V ULTRA FAST DIE |
有存货: 0 $0.00000 |
|
SIGC156T60NR2CX1SA4IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
有存货: 0 $0.00000 |
|
IRG8CH29K10DIR (Infineon Technologies) |
IGBT 1200V ULTRA FAST DIE |
有存货: 0 $0.00000 |
