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SIGC18T60SNCX1SA3

SIGC18T60SNCX1SA3

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制造商部分
SIGC18T60SNCX1SA3
制造商
IR (Infineon Technologies)
描述
IGBT 3 CHIP 600V WAFER
类别
分立半导体产品
家庭
晶体管 - igbts - 单
系列
-
有存货
9650
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Obsolete
igbt型:NPT
电压 - 集电极发射极击穿(最大值):600 V
电流 - 集电极 (ic) (max):20 A
电流 - 集电极脉冲 (icm):60 A
vce(on) (max) @ vge, ic:2.5V @ 15V, 20A
功率 - 最大值:-
开关能量:-
输入类型:Standard
栅极电荷:-
td(开/关)@ 25°c:36ns/250ns
测试条件:400V, 20A, 16Ohm, 15V
反向恢复时间 (trr):-
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:Die
供应商设备包:Die

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