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NGTD13T65F2WP

NGTD13T65F2WP

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制造商部分
NGTD13T65F2WP
制造商
Sanyo Semiconductor/ON Semiconductor
描述
IGBT TRENCH FIELD STOP 650V DIE
类别
分立半导体产品
家庭
晶体管 - igbts - 单
系列
-
有存货
6469
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
igbt型:Trench Field Stop
电压 - 集电极发射极击穿(最大值):650 V
电流 - 集电极 (ic) (max):-
电流 - 集电极脉冲 (icm):120 A
vce(on) (max) @ vge, ic:2.2V @ 15V, 30A
功率 - 最大值:-
开关能量:-
输入类型:Standard
栅极电荷:-
td(开/关)@ 25°c:-
测试条件:-
反向恢复时间 (trr):-
工作温度:-55°C ~ 175°C (TJ)
安装类型:Surface Mount
包/箱:Die
供应商设备包:Die

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