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| Type | 描述 |
|---|---|
| 系列: | GenX3™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| igbt型: | PT |
| 电压 - 集电极发射极击穿（最大值）: | 600 V |
| 电流 - 集电极 (ic) (max): | 38 A |
| 电流 - 集电极脉冲 (icm): | 200 A |
| vce(on) (max) @ vge, ic: | 1.4V @ 15V, 24A |
| 功率 - 最大值: | 64 W |
| 开关能量: | - |
| 输入类型: | Standard |
| 栅极电荷: | 66 nC |
| td（开/关）@ 25°c: | 18ns/300ns |
| 测试条件: | 480V, 24A, 10Ohm, 15V |
| 反向恢复时间 (trr): | 26 ns |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | TO-220-3 Full Pack, Isolated Tab |
| 供应商设备包: | TO-220 Isolated Tab |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
|
SIGC12T60NCX1SA5IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
有存货: 0 $0.00000 |
|
APT70GR65B2SCD30Microsemi |
INSULATED GATE BIPOLAR TRANSISTO |
有存货: 0 $0.00000 |
|
IRG7CH73UED-RIR (Infineon Technologies) |
IGBT 1200V ULTRA FAST DIE |
有存货: 0 $0.00000 |
|
SIGC25T60UNX1SA3IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
有存货: 0 $0.00000 |
|
IRG8CH106K10FIR (Infineon Technologies) |
IGBT 1200V 110A DIE |
有存货: 0 $0.00000 |
|
SIGC12T60NCX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
有存货: 0 $0.00000 |
|
SIGC18T60SNCX1SA2IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
有存货: 0 $0.00000 |
|
SIGC61T60NCX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
有存货: 0 $0.00000 |
|
SIGC42T60UNX7SA2IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
有存货: 0 $0.00000 |
|
IRGC35B60PBIR (Infineon Technologies) |
IGBT CHIP |
有存货: 0 $0.00000 |
