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NVMFD016N06CT1G

NVMFD016N06CT1G

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制造商部分
NVMFD016N06CT1G
制造商
Sanyo Semiconductor/ON Semiconductor
描述
MOSFET N-CH 60V 8DFN 5X6
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
6000
在线数据表
-
询问

Product Specifications

Type 描述
系列:Automotive, AEC-Q101
包裹:Tape & Reel (TR)
零件状态:Active
场效应管类型:2 N-Channel (Dual)
场效应管特征:Standard
漏源电压 (vdss):60V
电流 - 连续漏极 (id) @ 25°c:9A (Ta), 32A (Tc)
rds on (max) @ id, vgs:16.3mOhm @ 5A, 10V
vgs(th) (最大值) @ id:4V @ 25µA
栅极电荷 (qg) (max) @ vgs:6.9nC @ 10V
输入电容 (ciss) (max) @ vds:489pF @ 30V
功率 - 最大值:3.1W (Ta), 36W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Surface Mount
包/箱:8-PowerTDFN
供应商设备包:8-DFN (5x6) Dual Flag (SO8FL-Dual)

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