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SI1926DL-T1-BE3

SI1926DL-T1-BE3

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制造商部分
SI1926DL-T1-BE3
制造商
Vishay / Siliconix
描述
MOSFET 2N-CH 60V 0.37A SOT363
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
2940
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchFET®
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:2 N-Channel (Dual)
场效应管特征:Standard
漏源电压 (vdss):60V
电流 - 连续漏极 (id) @ 25°c:340mA (Ta), 370mA (Tc)
rds on (max) @ id, vgs:1.4Ohm @ 340mA, 10V
vgs(th) (最大值) @ id:2.5V @ 250µA
栅极电荷 (qg) (max) @ vgs:1.4nC @ 10V
输入电容 (ciss) (max) @ vds:18.5pF @ 30V
功率 - 最大值:300mW (Ta), 510mW (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:6-TSSOP, SC-88, SOT-363
供应商设备包:SC-70-6

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