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RJK0230DPA-00#J5A

RJK0230DPA-00#J5A

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制造商部分
RJK0230DPA-00#J5A
制造商
Renesas Electronics America
描述
POWER FIELD-EFFECT TRANSISTOR
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
213000
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
场效应管类型:2 N-Channel (Half Bridge)
场效应管特征:Logic Level Gate
漏源电压 (vdss):25V
电流 - 连续漏极 (id) @ 25°c:20A, 50A
rds on (max) @ id, vgs:7mOhm @ 10A, 10V
vgs(th) (最大值) @ id:-
栅极电荷 (qg) (max) @ vgs:7.7nC @ 4.5V
输入电容 (ciss) (max) @ vds:1650pF @ 10V
功率 - 最大值:15W, 35W
工作温度:150°C (TJ)
安装类型:Surface Mount
包/箱:8-PowerVDFN
供应商设备包:8-WPAK-D

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