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NTMFD1D4N02P1E

NTMFD1D4N02P1E

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制造商部分
NTMFD1D4N02P1E
制造商
Sanyo Semiconductor/ON Semiconductor
描述
MOSFET N-CH 20V 8PQFN
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
4211
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)
零件状态:Active
场效应管类型:2 N-Channel (Dual) Asymmetrical
场效应管特征:Standard
漏源电压 (vdss):25V
电流 - 连续漏极 (id) @ 25°c:13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc)
rds on (max) @ id, vgs:3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V
vgs(th) (最大值) @ id:2V @ 250µA, 2V @ 800µA
栅极电荷 (qg) (max) @ vgs:7.2nC @ 4.5V, 21.5nC @ 4.5V
输入电容 (ciss) (max) @ vds:1180pF @ 13V, 3603pF @ 13V
功率 - 最大值:960mW (Ta), 1W (Ta)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:8-PowerWDFN
供应商设备包:8-PQFN (5x6)

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