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RJK0216DPA-00#J53

RJK0216DPA-00#J53

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制造商部分
RJK0216DPA-00#J53
制造商
Renesas Electronics America
描述
POWER FIELD-EFFECT TRANSISTOR
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
72000
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
场效应管类型:2 N-Channel (Half Bridge)
场效应管特征:Logic Level Gate, 4.5V Drive
漏源电压 (vdss):25V
电流 - 连续漏极 (id) @ 25°c:15A, 32A
rds on (max) @ id, vgs:9.2mOhm @ 7.5A, 10V
vgs(th) (最大值) @ id:-
栅极电荷 (qg) (max) @ vgs:6.2nC @ 4.5V
输入电容 (ciss) (max) @ vds:1130pF @ 10V
功率 - 最大值:10W, 20W
工作温度:150°C (TJ)
安装类型:Surface Mount
包/箱:8-WFDFN
供应商设备包:8-DFN (5x6)

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