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APTM100A13DG

APTM100A13DG

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制造商部分
APTM100A13DG
制造商
Roving Networks / Microchip Technology
描述
MOSFET 2N-CH 1000V 65A SP6
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
4161
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
场效应管类型:2 N-Channel (Half Bridge)
场效应管特征:Standard
漏源电压 (vdss):1000V (1kV)
电流 - 连续漏极 (id) @ 25°c:65A
rds on (max) @ id, vgs:156mOhm @ 32.5A, 10V
vgs(th) (最大值) @ id:5V @ 6mA
栅极电荷 (qg) (max) @ vgs:562nC @ 10V
输入电容 (ciss) (max) @ vds:15200pF @ 25V
功率 - 最大值:1250W
工作温度:-40°C ~ 150°C (TJ)
安装类型:Chassis Mount
包/箱:SP6
供应商设备包:SP6

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