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APTC60VDAM45T1G

APTC60VDAM45T1G

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制造商部分
APTC60VDAM45T1G
制造商
Roving Networks / Microchip Technology
描述
MOSFET 2N-CH 600V 49A SP1
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
4171
在线数据表
-
询问

Product Specifications

Type 描述
系列:CoolMOS™
包裹:Tray
零件状态:Active
场效应管类型:2 N-Channel (Dual)
场效应管特征:Super Junction
漏源电压 (vdss):600V
电流 - 连续漏极 (id) @ 25°c:49A
rds on (max) @ id, vgs:45mOhm @ 24.5A, 10V
vgs(th) (最大值) @ id:3.9V @ 3mA
栅极电荷 (qg) (max) @ vgs:150nC @ 10V
输入电容 (ciss) (max) @ vds:7200pF @ 25V
功率 - 最大值:250W
工作温度:-40°C ~ 150°C (TJ)
安装类型:Chassis Mount
包/箱:SP1
供应商设备包:SP1

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