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HTNFET-DC

HTNFET-DC

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制造商部分
HTNFET-DC
制造商
Honeywell Aerospace
描述
MOSFET N-CH 55V 8-DIP
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
4530
在线数据表
-
询问

Product Specifications

Type 描述
系列:HTMOS™
包裹:Bulk
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):55 V
电流 - 连续漏极 (id) @ 25°c:-
驱动电压(最大 rds on,最小 rds on):5V
rds on (max) @ id, vgs:400mOhm @ 100mA, 5V
vgs(th) (最大值) @ id:2.4V @ 100µA
栅极电荷 (qg) (max) @ vgs:4.3 nC @ 5 V
vgs (最大值):10V
输入电容 (ciss) (max) @ vds:290 pF @ 28 V
场效应管特征:-
功耗(最大值):50W (Tj)
工作温度:-
安装类型:Through Hole
供应商设备包:-
包/箱:8-CDIP Exposed Pad

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