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PSMN2R4-30MLD115

PSMN2R4-30MLD115

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制造商部分
PSMN2R4-30MLD115
制造商
NXP Semiconductors
描述
N-CHANNEL POWER MOSFET
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
4533
在线数据表
-
询问

Product Specifications

Type 描述
系列:*
包裹:Bulk
零件状态:Active
场效应管类型:-
技术:-
漏源电压 (vdss):-
电流 - 连续漏极 (id) @ 25°c:-
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:-
vgs(th) (最大值) @ id:-
栅极电荷 (qg) (max) @ vgs:-
vgs (最大值):-
输入电容 (ciss) (max) @ vds:-
场效应管特征:-
功耗(最大值):-
工作温度:-
安装类型:-
供应商设备包:-
包/箱:-

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