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SI6473DQ-T1-GE3

SI6473DQ-T1-GE3

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制造商部分
SI6473DQ-T1-GE3
制造商
Vishay / Siliconix
描述
MOSFET P-CH 20V 6.2A 8TSSOP
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
7630
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchFET®
包裹:Tape & Reel (TR)
零件状态:Obsolete
场效应管类型:P-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):20 V
电流 - 连续漏极 (id) @ 25°c:6.2A (Ta)
驱动电压(最大 rds on,最小 rds on):1.8V, 4.5V
rds on (max) @ id, vgs:12.5mOhm @ 9.5A, 4.5V
vgs(th) (最大值) @ id:450mV @ 250µA (Min)
栅极电荷 (qg) (max) @ vgs:70 nC @ 5 V
vgs (最大值):±8V
输入电容 (ciss) (max) @ vds:-
场效应管特征:-
功耗(最大值):1.08W (Ta)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:8-TSSOP
包/箱:8-TSSOP (0.173", 4.40mm Width)

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