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2N7635-GA

2N7635-GA

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制造商部分
2N7635-GA
制造商
GeneSiC Semiconductor
描述
TRANS SJT 650V 4A TO257
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
7637
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Obsolete
场效应管类型:-
技术:SiC (Silicon Carbide Junction Transistor)
漏源电压 (vdss):650 V
电流 - 连续漏极 (id) @ 25°c:4A (Tc) (165°C)
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:415mOhm @ 4A
vgs(th) (最大值) @ id:-
栅极电荷 (qg) (max) @ vgs:-
vgs (最大值):-
输入电容 (ciss) (max) @ vds:324 pF @ 35 V
场效应管特征:-
功耗(最大值):47W (Tc)
工作温度:-55°C ~ 225°C (TJ)
安装类型:Through Hole
供应商设备包:TO-257
包/箱:TO-257-3

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