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IRF1902GTRPBF

IRF1902GTRPBF

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制造商部分
IRF1902GTRPBF
制造商
IR (Infineon Technologies)
描述
MOSFET N-CH 20V 4.2A 8SO
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
7419
在线数据表
-
询问

Product Specifications

Type 描述
系列:HEXFET®
包裹:Tape & Reel (TR)
零件状态:Obsolete
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):20 V
电流 - 连续漏极 (id) @ 25°c:4.2A (Ta)
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:85mOhm @ 4A, 4.5V
vgs(th) (最大值) @ id:700mV @ 250µA
栅极电荷 (qg) (max) @ vgs:7.5 nC @ 4.5 V
vgs (最大值):-
输入电容 (ciss) (max) @ vds:310 pF @ 15 V
场效应管特征:-
功耗(最大值):-
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:8-SO
包/箱:8-SOIC (0.154", 3.90mm Width)

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