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| Type | 描述 |
|---|---|
| 系列: | TrenchMV™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 75 V |
| 电流 - 连续漏极 (id) @ 25°c: | 250A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 4mOhm @ 50A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 200 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 9900 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 550W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247 (IXTH) |
| 包/箱: | TO-247-3 |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
 |
SI1013X-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 350MA SC89-3 |
有存货: 0 $0.00000 |
 |
FQB46N15TM_AM002Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 45.6A D2PAK |
有存货: 0 $0.00000 |
 |
TPC8021-H(TE12LQ,MToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 11A 8SOP |
有存货: 0 $0.00000 |
 |
IPD60R650CEATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 7A TO252-3 |
有存货: 0 $0.00000 |
 |
IRL3103STRRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 64A D2PAK |
有存货: 0 $0.00000 |
 |
AON7450Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 5.6A/21A 8DFN |
有存货: 0 $0.00000 |
 |
IPD05N03LA GIR (Infineon Technologies) |
MOSFET N-CH 25V 50A TO252-3 |
有存货: 0 $0.00000 |
 |
SI7794DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 28.6A/60A PPAK |
有存货: 0 $0.00000 |
 |
IRFZ48STRRVishay / Siliconix |
MOSFET N-CH 60V 50A D2PAK |
有存货: 0 $0.00000 |
 |
IRFS4610IR (Infineon Technologies) |
MOSFET N-CH 100V 73A D2PAK |
有存货: 0 $0.00000 |
