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FDR8508P

FDR8508P

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制造商部分
FDR8508P
制造商
Fairchild (ON Semiconductor)
描述
SMALL SIGNAL P-CHANNEL MOSFET
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
21815
在线数据表
-
询问

Product Specifications

Type 描述
系列:PowerTrench®
包裹:Bulk
零件状态:Obsolete
场效应管类型:2 P-Channel (Dual)
场效应管特征:Logic Level Gate
漏源电压 (vdss):30V
电流 - 连续漏极 (id) @ 25°c:3A
rds on (max) @ id, vgs:52mOhm @ 3A, 10V
vgs(th) (最大值) @ id:3V @ 250µA
栅极电荷 (qg) (max) @ vgs:12nC @ 5V
输入电容 (ciss) (max) @ vds:750pF @ 15V
功率 - 最大值:800mW
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:8-LSOP (0.130", 3.30mm Width)
供应商设备包:SuperSOT™-8

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