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BSG0813NDIATMA1

BSG0813NDIATMA1

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制造商部分
BSG0813NDIATMA1
制造商
IR (Infineon Technologies)
描述
MOSFET 2N-CH 25V 19A/33A TISON8
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
1291
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)
零件状态:Active
场效应管类型:2 N-Channel (Dual) Asymmetrical
场效应管特征:Logic Level Gate, 4.5V Drive
漏源电压 (vdss):25V
电流 - 连续漏极 (id) @ 25°c:19A, 33A
rds on (max) @ id, vgs:3mOhm @ 20A, 10V
vgs(th) (最大值) @ id:2V @ 250µA
栅极电荷 (qg) (max) @ vgs:8.4nC @ 4.5V
输入电容 (ciss) (max) @ vds:1100pF @ 12V
功率 - 最大值:2.5W
工作温度:-55°C ~ 155°C (TJ)
安装类型:Surface Mount
包/箱:8-PowerTDFN
供应商设备包:PG-TISON-8

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