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SI7212DN-T1-E3

SI7212DN-T1-E3

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制造商部分
SI7212DN-T1-E3
制造商
Vishay / Siliconix
描述
MOSFET 2N-CH 30V 4.9A 1212-8
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
2596
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:2 N-Channel (Dual)
场效应管特征:Logic Level Gate
漏源电压 (vdss):30V
电流 - 连续漏极 (id) @ 25°c:4.9A
rds on (max) @ id, vgs:36mOhm @ 6.8A, 10V
vgs(th) (最大值) @ id:1.6V @ 250µA
栅极电荷 (qg) (max) @ vgs:11nC @ 4.5V
输入电容 (ciss) (max) @ vds:-
功率 - 最大值:1.3W
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:PowerPAK® 1212-8 Dual
供应商设备包:PowerPAK® 1212-8 Dual

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