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NVMFD5877NLT1G

NVMFD5877NLT1G

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制造商部分
NVMFD5877NLT1G
制造商
Sanyo Semiconductor/ON Semiconductor
描述
MOSFET 2N-CH 60V 6A 8SOIC
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
0969
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Not For New Designs
场效应管类型:2 N-Channel (Dual)
场效应管特征:Logic Level Gate
漏源电压 (vdss):60V
电流 - 连续漏极 (id) @ 25°c:6A
rds on (max) @ id, vgs:39mOhm @ 7.5A, 10V
vgs(th) (最大值) @ id:3V @ 250µA
栅极电荷 (qg) (max) @ vgs:20nC @ 10V
输入电容 (ciss) (max) @ vds:540pF @ 25V
功率 - 最大值:3.2W
工作温度:-55°C ~ 175°C (TJ)
安装类型:Surface Mount
包/箱:8-PowerTDFN
供应商设备包:8-DFN (5x6) Dual Flag (SO8FL-Dual)

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