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PMDT290UCE,115

PMDT290UCE,115

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制造商部分
PMDT290UCE,115
制造商
Nexperia
描述
MOSFET N/P-CH 20V SOT666
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
15640
在线数据表
-
询问

Product Specifications

Type 描述
系列:Automotive, AEC-Q101, TrenchMOS™
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N and P-Channel
场效应管特征:Logic Level Gate
漏源电压 (vdss):20V
电流 - 连续漏极 (id) @ 25°c:800mA, 550mA
rds on (max) @ id, vgs:380mOhm @ 500mA, 4.5V
vgs(th) (最大值) @ id:950mV @ 250µA
栅极电荷 (qg) (max) @ vgs:0.68nC @ 4.5V
输入电容 (ciss) (max) @ vds:83pF @ 10V
功率 - 最大值:500mW
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:SOT-563, SOT-666
供应商设备包:SOT-666

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