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RF1S15N06

RF1S15N06

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制造商部分
RF1S15N06
制造商
Harris Corporation
描述
DISCRETE ,LOGIC LEVEL GATE (5V),
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
2400
在线数据表
-
询问

Product Specifications

Type 描述
系列:*
包裹:Bulk
零件状态:Active
场效应管类型:-
场效应管特征:-
漏源电压 (vdss):-
电流 - 连续漏极 (id) @ 25°c:-
rds on (max) @ id, vgs:-
vgs(th) (最大值) @ id:-
栅极电荷 (qg) (max) @ vgs:-
输入电容 (ciss) (max) @ vds:-
功率 - 最大值:-
工作温度:-
安装类型:-
包/箱:-
供应商设备包:-

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