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FF6MR12KM1PHOSA1

FF6MR12KM1PHOSA1

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制造商部分
FF6MR12KM1PHOSA1
制造商
IR (Infineon Technologies)
描述
MEDIUM POWER 62MM
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
0678
在线数据表
-
询问

Product Specifications

Type 描述
系列:CoolSiC™
包裹:Tray
零件状态:Active
场效应管类型:2 N-Channel (Half Bridge)
场效应管特征:Silicon Carbide (SiC)
漏源电压 (vdss):1200V (1.2kV)
电流 - 连续漏极 (id) @ 25°c:250A (Tc)
rds on (max) @ id, vgs:5.81mOhm @ 250A, 15V
vgs(th) (最大值) @ id:5.15V @ 80mA
栅极电荷 (qg) (max) @ vgs:496nC @ 15V
输入电容 (ciss) (max) @ vds:14700pF @ 800V
功率 - 最大值:-
工作温度:-40°C ~ 150°C (TJ)
安装类型:Chassis Mount
包/箱:Module
供应商设备包:AG-62MM

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