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ECH8601M-TL-H

ECH8601M-TL-H

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制造商部分
ECH8601M-TL-H
制造商
Sanyo Semiconductor/ON Semiconductor
描述
N-CHANNEL POWER MOSFET
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
12705
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Obsolete
场效应管类型:2 N-Channel (Dual) Common Drain
场效应管特征:Logic Level Gate, 2.5V Drive
漏源电压 (vdss):24V
电流 - 连续漏极 (id) @ 25°c:8A (Ta)
rds on (max) @ id, vgs:23mOhm @ 4A, 4.5V
vgs(th) (最大值) @ id:1.3V @ 1mA
栅极电荷 (qg) (max) @ vgs:7.5nC @ 4.5V
输入电容 (ciss) (max) @ vds:-
功率 - 最大值:-
工作温度:150°C (TJ)
安装类型:Surface Mount
包/箱:8-SMD, Flat Lead
供应商设备包:8-ECH

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