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SQS966ENW-T1_GE3

SQS966ENW-T1_GE3

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制造商部分
SQS966ENW-T1_GE3
制造商
Vishay / Siliconix
描述
MOSFET N-CHAN 60V
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
725
在线数据表
-
询问

Product Specifications

Type 描述
系列:Automotive, AEC-Q101, TrenchFET®
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:2 N-Channel (Dual)
场效应管特征:Standard
漏源电压 (vdss):60V
电流 - 连续漏极 (id) @ 25°c:6A (Tc)
rds on (max) @ id, vgs:36mOhm @ 1.25A, 10V
vgs(th) (最大值) @ id:2.5V @ 250µA
栅极电荷 (qg) (max) @ vgs:8.8nC @ 10V
输入电容 (ciss) (max) @ vds:572pF @ 25V
功率 - 最大值:27.8W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Surface Mount, Wettable Flank
包/箱:PowerPAK® 1212-8W Dual
供应商设备包:PowerPAK® 1212-8W Dual

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