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SH8M24GZETB

SH8M24GZETB

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制造商部分
SH8M24GZETB
制造商
ROHM Semiconductor
描述
4V DRIVE NCH+PCH MOSFET. COMPLEX
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
0496
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N and P-Channel
场效应管特征:Standard
漏源电压 (vdss):45V
电流 - 连续漏极 (id) @ 25°c:6A (Ta)
rds on (max) @ id, vgs:46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
vgs(th) (最大值) @ id:2.5V @ 1mA
栅极电荷 (qg) (max) @ vgs:9.6nC, 18.2nC @ 5V
输入电容 (ciss) (max) @ vds:550pF, 1700pF @ 10V
功率 - 最大值:1.4W (Ta)
工作温度:150°C (TJ)
安装类型:Surface Mount
包/箱:8-SOIC (0.154", 3.90mm Width)
供应商设备包:8-SOP

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