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EPC2108

EPC2108

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制造商部分
EPC2108
制造商
EPC
描述
GANFET 3 N-CH 60V/100V 9BGA
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
2586
在线数据表
-
询问

Product Specifications

Type 描述
系列:eGaN®
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:3 N-Channel (Half Bridge + Synchronous Bootstrap)
场效应管特征:GaNFET (Gallium Nitride)
漏源电压 (vdss):60V, 100V
电流 - 连续漏极 (id) @ 25°c:1.7A, 500mA
rds on (max) @ id, vgs:190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
vgs(th) (最大值) @ id:2.5V @ 100µA, 2.5V @ 20µA
栅极电荷 (qg) (max) @ vgs:0.22nC @ 5V, 0.044nC @ 5V
输入电容 (ciss) (max) @ vds:22pF @ 30V, 7pF @ 30V
功率 - 最大值:-
工作温度:-40°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:9-VFBGA
供应商设备包:9-BGA (1.35x1.35)

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