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SSM6N951L,EFF

SSM6N951L,EFF

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制造商部分
SSM6N951L,EFF
制造商
Toshiba Electronic Devices and Storage Corporation
描述
SMALL SIGNAL MOSFET RDSON: 4.4MO
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
9950
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:2 N-Channel (Dual) Common Drain
场效应管特征:Standard
漏源电压 (vdss):12V
电流 - 连续漏极 (id) @ 25°c:8A
rds on (max) @ id, vgs:5.1mOhm @ 8A, 4.5V
vgs(th) (最大值) @ id:-
栅极电荷 (qg) (max) @ vgs:-
输入电容 (ciss) (max) @ vds:-
功率 - 最大值:-
工作温度:-
安装类型:Surface Mount
包/箱:6-SMD, No Lead
供应商设备包:6-TCSPA (2.14x1.67)

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