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QH8MA3TCR

QH8MA3TCR

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制造商部分
QH8MA3TCR
制造商
ROHM Semiconductor
描述
MOSFET N/P-CH 30V TSMT8
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
2
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N and P-Channel
场效应管特征:Standard
漏源电压 (vdss):30V
电流 - 连续漏极 (id) @ 25°c:7A, 5.5A
rds on (max) @ id, vgs:29mOhm @ 7A, 10V
vgs(th) (最大值) @ id:2.5V @ 1mA
栅极电荷 (qg) (max) @ vgs:7.2nC @ 10V
输入电容 (ciss) (max) @ vds:300pF @ 15V
功率 - 最大值:1.5W
工作温度:150°C (TJ)
安装类型:Surface Mount
包/箱:8-SMD, Flat Lead
供应商设备包:TSMT8

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