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CSD75207W15

CSD75207W15

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制造商部分
CSD75207W15
制造商
Texas Instruments
描述
MOSFET 2P-CH 3.9A 9DSBGA
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
9497
在线数据表
-
询问

Product Specifications

Type 描述
系列:NexFET™
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:2 P-Channel (Dual) Common Source
场效应管特征:Logic Level Gate
漏源电压 (vdss):-
电流 - 连续漏极 (id) @ 25°c:3.9A
rds on (max) @ id, vgs:162mOhm @ 1A, 1.8V
vgs(th) (最大值) @ id:1.1V @ 250µA
栅极电荷 (qg) (max) @ vgs:3.7nC @ 4.5V
输入电容 (ciss) (max) @ vds:595pF @ 10V
功率 - 最大值:700mW
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:9-UFBGA, DSBGA
供应商设备包:9-DSBGA

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