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HS8K11TB

HS8K11TB

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制造商部分
HS8K11TB
制造商
ROHM Semiconductor
描述
MOSFET 2N-CH 30V 7A/11A HSML
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
668
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:2 N-Channel (Dual)
场效应管特征:Logic Level Gate
漏源电压 (vdss):30V
电流 - 连续漏极 (id) @ 25°c:7A, 11A
rds on (max) @ id, vgs:17.9mOhm @ 7A, 10V
vgs(th) (最大值) @ id:2.5V @ 1mA
栅极电荷 (qg) (max) @ vgs:11.1nC @ 10V
输入电容 (ciss) (max) @ vds:500pF @ 15V
功率 - 最大值:2W
工作温度:150°C (TJ)
安装类型:Surface Mount
包/箱:8-UDFN Exposed Pad
供应商设备包:HSML3030L10

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