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SQUN702E-T1_GE3

SQUN702E-T1_GE3

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制造商部分
SQUN702E-T1_GE3
制造商
Vishay / Siliconix
描述
MOSFET N&P-CH COMMON DRAIN
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
150
在线数据表
-
询问

Product Specifications

Type 描述
系列:Automotive, AEC-Q101, TrenchFET®
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N and P-Channel, Common Drain
场效应管特征:Standard
漏源电压 (vdss):40V, 200V
电流 - 连续漏极 (id) @ 25°c:30A (Tc), 20A (Tc)
rds on (max) @ id, vgs:9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
vgs(th) (最大值) @ id:2.5V @ 250µA, 3.5V @ 250µA
栅极电荷 (qg) (max) @ vgs:23nC, 14nC, 30.2nC @ 10V
输入电容 (ciss) (max) @ vds:1474pF, 1450pF, 1302pF @ 20V, 100V
功率 - 最大值:48W (Tc), 60W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Surface Mount, Wettable Flank
包/箱:Die
供应商设备包:Die

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