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NVDD5894NLT4G

NVDD5894NLT4G

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制造商部分
NVDD5894NLT4G
制造商
Sanyo Semiconductor/ON Semiconductor
描述
N-CHANNEL, MOSFET
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
2500
在线数据表
-
询问

Product Specifications

Type 描述
系列:Automotive, AEC-Q101
包裹:Bulk
零件状态:Active
场效应管类型:2 N-Channel (Dual) Common Drain
场效应管特征:Standard
漏源电压 (vdss):40V
电流 - 连续漏极 (id) @ 25°c:14A (Ta), 64A (Tc)
rds on (max) @ id, vgs:10mOhm @ 50A, 10V
vgs(th) (最大值) @ id:2.5V @ 250µA
栅极电荷 (qg) (max) @ vgs:41nC @ 10V
输入电容 (ciss) (max) @ vds:2103pF @ 25V
功率 - 最大值:3.8W (Ta), 75W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Surface Mount
包/箱:TO-252-5, DPak (4 Leads + Tab), TO-252AD
供应商设备包:DPAK-5

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