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STGF20H65DFB2

STGF20H65DFB2

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制造商部分
STGF20H65DFB2
制造商
STMicroelectronics
描述
TRENCH GATE FIELD-STOP 650 V, 20
类别
分立半导体产品
家庭
晶体管 - igbts - 单
系列
-
有存货
200
在线数据表
-
询问

Product Specifications

Type 描述
系列:HB2
包裹:Tube
零件状态:Active
igbt型:Trench Field Stop
电压 - 集电极发射极击穿(最大值):650 V
电流 - 集电极 (ic) (max):40 A
电流 - 集电极脉冲 (icm):60 A
vce(on) (max) @ vge, ic:2.1V @ 15V, 20A
功率 - 最大值:45 W
开关能量:265µJ (on), 214µJ (off)
输入类型:Standard
栅极电荷:56 nC
td(开/关)@ 25°c:16ns/78.8ns
测试条件:400V, 20A, 10Ohm, 15V
反向恢复时间 (trr):215 ns
工作温度:-55°C ~ 175°C (TJ)
安装类型:Through Hole
包/箱:TO-220-3 Full Pack
供应商设备包:TO-220FP

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